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| STC503D Datasheet, PDF (1/5 Pages) KODENSHI KOREA CORP. – NPN Silicon Transistor | |||
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STC503D
NPN Silicon Transistor
Applications
⢠Power amplifier application
⢠High current switching application
PIN Connection
Features
⢠Power Transistor General Purpose application
⢠Low saturation voltage
: VCE(sat)=0.4V Typ.
⢠High Voltage : VCEO=65V Min.
Ordering Information
Type NO.
STC503D
Marking
STC503
TO-252
Package Code
TO-252
Absolute Maximum Ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300 ã²
Characteristic
Thermal resistance Junction-ambient
Thermal resistance Junction-case
Symbol
VCBO
VCEO
VEBO
IC
ICP*
PC(Ta= 25°C)
PC(TC= 25°C)
Tj
Tstg
Symbol
Rth(J-a)
Rth(J-c)
Rating
80
65
5
3
6
1
10
150
-55~150
Typ.
-
-
Max
125.0
12.5
[Ta=25â]
Unit
V
V
V
A(DC)
A(Pulse)
W
W
°C
°C
Unit
â/W
â/W
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Base-Emitter on voltage
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
* hFE rank : 300~500 Only
Symbol
BVCEO
ICBO
IEBO
hFE *
VBE(ON)
VCE(sat)
fT
Cob
Test Condition
IC=1mA, IB=0
VCB=65V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.5A
VCE=5V, IC=0.5A
IC=2A, IB=0.2A
VCB=5V, IC=50mA
VCB=10V, IE=0, f=1MHz
KSD-T6O026-000
Min.
65
-
-
300
-
-
-
-
Typ.
-
-
-
-
0.7
0.4
250
15
(Ta=25°C)
Max. Unit
-
V
50
μA
50
μA
500
-
1
V
1
V
-
MHz
-
pF
1
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