STC411 Datasheet, PDF (1/5 Pages) KODENSHI KOREA CORP. – NPN Silicon Transistor

STC411
NPN Silicon Transistor
Description
• General purpose amplifier
• High voltage application
PIN Connection
C
Features
• Low saturation switching application
• Voltage regulator application
• Low saturation : V_CE(SAT)=0.4V Max.
• High Voltage : V_CEO=60V Min.
Ordering Information
Type NO.
Marking
STC411
STC411
E
B
C
Package Code
TO-92
B
E
TO-92
Absolute maximum ratings
Characteristic
Symbol
Ratings
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300 ㎲
V_CBO
V_CEO
V_EBO
I_C
I_CP*
P_C
T_j
T_stg
80
60
5
1
2
500
150
-55~150
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Base-Emitter on voltage
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE *
V_BE(ON)
I_C=100 ㎂, I_E=0
I_C=1mA, I_B=0
I_E=10mA, I_C=0
V_CB=60V, I_E=0
V_EB=5V, I_C=0
V_CE=2V, I_C=100mA
V_CE=2V, I_C=1A
V_CE=2V, I_C=500mA
80
60
5
-
-
200
80
-
Collector-Emitter saturation voltage V_CE(sat) I_C=500mA, I_B=50mA
-
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
-
Transition frequency
f_T
V_CB=10V, I_C=50mA
-
* h_FE rank : 200~400 Only
KSD-T0A032-000
Typ.
-
-
-
-
-
-
-
-
-
10
160
Unit
V
V
V
A(DC)
A(Pulse)
mW
°C
°C
Max.
-
-
-
0.1
0.1
400
-
1.2
0.4
-
-
Unit
V
V
V
μA
μA
-
V
V
pF
MHz
1