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| STC4073F Datasheet, PDF (1/6 Pages) KODENSHI KOREA CORP. – NPN Silicon Transistor | |||
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STC4073F
NPN Silicon Transistor
Descriptions
⢠General purpose amplifier
⢠High voltage application
PIN Connection
Features
⢠High collector breakdown voltage
: VCEO = 120V
⢠Low collector saturation voltage
: VCE(sat)=0.5V(MAX.)
⢠âGreenâ device and RoHS compliant device
⢠Available in full lead (Pb)-free device
Ordering Information
Type No.
Marking
Package Code
STC4073F
M73
â¡YWW
SOT-89
M73: DEVICE CODE, â¡ : hFE rank, YWW(Y : Year code, WW : Weekly code)
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP*
PC
PC**
TJ
Tstg
Ratings
120
120
6
1
2
0.5
1
150
-55~150
SOT-89
(Ta=25°C)
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Characteristic
Symbol
Thermal resistance Junction-ambient
Rth(J-A)
Rth(J-A) **
* : Single pulse, tp= 300 ã²
** : When mounted on ceramic substrate(250 ãÃ0.8t)
KSD-T5B017-004
Typ.
-
-
Max
250.0
125.0
Unit
â/W
1
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