STC401 Datasheet, PDF (1/5 Pages) AUK corp – NPN Silicon Transistor

STC401
NPN Silicon Transistor
Features
• Low saturation switching application
• Voltage regulator application
• Low saturation : V_CE(SAT)=0.4V Max.
• High Voltage : V_CEO=60V Min.
PIN Connection
C
B
E
C
B
E
TO-92
Ordering Information
Type NO.
Marking
Package Code
STC401
STC401
TO-92
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
80
60
5
1
500
150
-55~150
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=100 ㎂, I_E=0
Collector-Emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
Emitter-Base breakdown voltage
BV_EBO I_E=10mA, I_C=0
Collector cut-off current
Emitter cut-off current
DC current gain
I_CBO
I_EBO
h_FE *
V_CB=60V, I_E=0
V_EB=5V, I_C=0
V_CE=2V, I_C=100mA
V_CE=2V, I_C=1A
Base-Emitter on voltage
V_BE(ON) V_CE=2V, I_C=500mA
Collector-Emitter saturation voltage V_CE(sat) I_C=500mA, I_B=50mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Transition frequency
f_T
V_CB=10V, I_C=50mA
* h_FE rank : 200~400 Only
Min. Typ. Max.
80
-
-
60
-
-
5
-
-
-
-
0.1
-
-
0.1
200
-
400
80
-
-
-
-
1.2
-
-
0.4
-
10
-
-
160
-
Unit
V
V
V
μA
μA
-
V
V
pF
MHz
KSD-T0A027-001
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