STC221F Datasheet, PDF (1/6 Pages) KODENSHI KOREA CORP. – NPN Silicon Transistor

STC221F
NPN Silicon Transistor
Descriptions
• General purpose amplifier
• High current application
PIN Connection
Features
• High h_FE : h_FE=160~320
• Low collector saturation voltage
: V_CE(sat)=0.5V(MAX.)
Ordering Information
Type No.
Marking
Package Code
STC221F
C221
YWW
SOT-89
C221: DEVICE CODE, YWW(Y : Year code, WW : Weekly code)
SOT-89
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP*
P_C
P_C^**
T_J
T_stg
Ratings
45
40
5
0.8
1.6
0.5
1
150
-55~150
(Ta=25°C)
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Characteristic
Symbol
Thermal resistance Junction-ambient
R_th(J-A)
R_th(J-A) ^**
* : Single pulse, tp= 300 ㎲
** : When mounted on ceramic substrate(250 ㎟×0.8t)
Typ.
-
-
Max
250.0
125.0
Unit
℃/W
KSD-T5B019-001
1