STC128M Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

STC128M
NPN Silicon Transistor
Features
• Low saturation medium current application
• Extremely low collector saturation voltage
• Suitable for low voltage large current drivers
• High DC current gain and large current capability
• Low on resistance : R_ON=0.6Ω(Max.) (I_B=1mA)
PIN Connection
E
C
B
Ordering Information
Type NO.
Marking
STC128M
C128
Package Code
TO-92M
TO-92M
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
20
15
6.5
1
400
150
-55~150
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-base breakdown voltage
BV_CBO I_C=50μA, I_E=0
Collector-Emitter breakdown voltage
Emitter-base breakdown voltage
BV_CEO
BV_EBO
I_C=1mA, I_B=0
I_E=50μA, I_C=0
Collector cut-off current
I_CBO
V_CB=20V, I_E=0
Emitter cut-off current
I_EBO
V_EB=6V, I_C=0
DC current gain
h_FE
V_CE=1V, I_C=100mA
Collector-Emitter saturation voltage V_CE(sat) I_C=500mA, I_B=50mA
Transistor frequency
f_T
V_CE=5V, I_C=50mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
On resistance
R_ON
f=1KHz, I_B=1Ma, V_IN=0.3V
Min. Typ. Max.
20
-
-
15
-
-
6.5
-
-
-
-
0.1
-
-
0.1
150
-
-
-
0.1 0.3
-
260
-
-
5
-
-
0.6
-
Unit
V
V
V
μA
μA
-
V
MHz
pF
Ω
KSD-T0B003-000
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