STB205L Datasheet, PDF (1/5 Pages) KODENSHI KOREA CORP. – PNP Silicon Transistor

STB205L
PNP Silicon Transistor
Descriptions
• Suitable for low voltage large current drivers
• Excellent h_FE Linearity.
• Switching Application
PIN Connection
Features
• High h_FE : h_FE=200~400
• Low collector saturation voltage.
: V_CE(sat)=-0.5V(MAX.)
TO -92L
1: Emitter 2 :Collector 3: Base
Ordering Information
Type NO.
STB205L
Marking
STB
205
YWW
Package Code
TO-92L
STB205: DEVICE CODE, YWW(Y : Year code, WW : Weekly code)
Absolute Maximum Ratings
(Ta=25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V_CBO
V_CEO
V_EBO
I_C
I_CP*
-35
V
-20
V
-5
V
-5
A(DC)
-10
A(Pulse)
Collector power dissipation
Junction temperature
Storage temperature range
* : Single pulse, tp= 300 ㎲
P_C
1
W
T_J
150
°C
T_stg
-55~150
°C
Characteristic
Thermal resistance
Symbol
R_th(J-a)
Typ.
-
Max
125.0
Unit
℃/W
KSD-T0D010-001
1