STB1132 Datasheet, PDF (1/4 Pages) AUK corp – PNP Silicon Transistor

STB1132
PNP Silicon Transistor
Description
• Medium power amplifier
PIN
Features
• P_C(Collector power dissipation)
=1W(Ceramic substate of 250 ㎟×0.8t used)
• Low collector saturation voltage : V_CE(sat)=-0.2V(Typ.)
• Complementary pair with STD1664
Ordering Information
SOT-89
Type NO.
STB1132
Marking
Package Code
A1
YWW
SOT-89
A1: DEVICE CODE, YWW(Y : Year code, WW : Weekly code)
Absolute maximum ratings
Characteristic
Symbol
Ratings
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
V_CBO
V_CEO
V_EBO
-40
-32
-5
Collector current
I_C
Collector power dissipation
P_C
P_C^*
Junction temperature
T_J
Storage temperature
T_stg
* : When mounted on ceramic substrate(250 ㎟×0.8t)
-1
0.5
1
150
-55~150
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Collector-Base breakdown voltage
BV_CBO I_C=-50 ㎂, I_E=0
-40
Collector-Emitter breakdown voltage BV_CEO I_C=-1 ㎃, I_B=0
-32
Emitter-Base breakdown voltage
BV_EBO I_E=-50 ㎂, I_C=0
-5
Collector cut-off current
I_CBO
V_CB=-20V, I_E=0
-
Collector cut-off current
I_CES
V_CE=-30V, I_C=0
-
Emitter cut-off current
I_EBO
V_EB=-4V, I_C=0
-
DC current gain
h_FE^*
V_CE=-3V, I_C=-0.1A
100
Collector-Emitter saturation voltage
V_CE(sat) I_C=-500 ㎃, I_B=-50 ㎃
-
Transition frequency
f_T
V_CE=-5V, I_C=-50 ㎃,
f=30 ㎒
-
Collector output capacitance
C_ob
V_CB=-10V, I_E=0, f=1 ㎒
-
* : h_FE rank / O : 100 ~ 200, Y : 160 ~ 320
KSD-T5B021-001
Typ.
-
-
-
-
-
-
-
-0.2
150
20
(Ta=25°C)
Unit
V
V
V
A
W
°C
°C
(Ta=25°C)
Max. Unit
-
V
-
V
-
V
-0.1 ㎂
-0.1 ㎂
-0.1 ㎂
320
-
-0.8
V
-
㎒
30
㎊
1