STA3360PI Datasheet, PDF (1/6 Pages) KODENSHI KOREA CORP. – PNP Silicon Transistor

STA3360PI
PNP Silicon Transistor
Applications
• Power amplifier application
• High current switching application
Features
• Low saturation voltage
: V_CE(sat)=-0.15V Typ. @ I_C=-1A, I_B=-50mA
• Large collector current capacity: I_C=-3A
• TO-220F-3L DIP type package
Ordering Information
Type NO.
Marking
Package Code
STA3360PI
STA3360
TO-220F-3L
PIN Connection
1
2
3
TO-220F-3L
Marking Diagram
A_AU_UK _K
S^△T^ΔYAYM3M3D6^DD0D
SDB20D45
Column 1 : Manufacturer
Column 2 : Production Information
- △ : Factory Management Code
- YMDD : Date Code (Year, Month, Date)
Column 3 : Device Code
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation(T_C=25°C)
Junction temperature
Storage temperature range
* : Single pulse, tp= 300 ㎲
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP*
P_C
T_J
T_stg
Symbol
R_th(J-C)
R_th(J-a)
Rating
-60
-60
-6
-3
-6
15
150
-55~150
[Ta=25℃]
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Typ.
-
-
Max
8.33
62.5
Unit
℃/W
KSD-T0O109-000
1