STA3350Q Datasheet, PDF (1/6 Pages) KODENSHI KOREA CORP. – PNP Silicon Transistor

Applications
• Power amplifier application
• High current switching application
Features
• Low saturation voltage:
V_CE(sat)=-0.15V Typ. @ I_C=-1A, I_B=-50mA
• Large collector current capacity: I_C=-3A
• Small and compact SMD type package
• “Green” device and RoHS compliant device
• Available in full lead (Pb)-free device
STA3350Q
PNP Silicon Transistor
PIN Connection
SOT-223
Ordering Information
Type NO.
Marking
Package Code
STA3350Q
STA3350
YWW
STA3350: DEVICE CODE, YWW(Y : Year code, WW : Weekly code)
SOT-223
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature range
* : Single pulse, tp= 300 ㎲
** : When mounted on copper substrate(250 ㎟×0.8t)
Characteristic
Thermal resistance Junction-ambient
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP*
P_C
P_C^**
T_J
T_stg
Symbol
R_th(J-a)
Rating
-50
-50
-6
-3
-6
1.1
1.5
150
-55~150
[Ta=25℃]
Unit
V
V
V
A(DC)
A(Pulse)
W
W
°C
°C
Typ.
-
-
Max
113.6
83.3^**
Unit
℃/W
℃/W
KSD-T5A008-000
1