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| STA3350PI Datasheet, PDF (1/5 Pages) KODENSHI KOREA CORP. – PNP Silicon Transistor | |||
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STA3350PI
PNP Silicon Transistor
Applications
⢠Power amplifier application
⢠High current switching application
Features
⢠Low saturation voltage
: VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA
⢠Large collector current capacity: IC=-3A
⢠TO-220F-3L DIP type package
Ordering Information
Type NO.
Marking
Package Code
STA3350PI
STA3350
TO-220F-3L
PIN Connection
TO-220F-3L
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation(TC=25°C)
Junction temperature
Storage temperature range
* : Single pulse, tp= 300 ã²
Symbol
VCBO
VCEO
VEBO
IC
ICP*
PC
TJ
Tstg
Rating
-50
-50
-6
-3
-6
10
150
-55~150
[Ta=25â]
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
[Ta=25â]
Min. Typ. Max. Unit
Collector-emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
-50
-
-
V
Collector cut-off current
ICBO
VCB=-50V, IE=0
-
-
-1
μA
Emitter cut-off current
IEBO
VEB=-6V, IC=0
-
-
-1
μA
DC current gain
hFE
VCE=-2V, IC=-0.5A*
hFE
VCE=-2V, IC=-2A*
120
-
240
40
-
-
Collector-emitter saturation voltage
VCE(sat)
IC=-1A, IB=-0.05A*
-
- -0.35 V
Base-emitter saturation voltage
VBE(sat)
IC=-2A, IB=-0.1A*
- -0.97 -1.2
V
Transition frequency
Collector output capacitance
fT
VCE=-10V, IC=-0.05A
Cob
VCB=-10V, IE=0, f=1MHz
-
250
-
MHz
-
28
-
pF
Turn-on Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
<
-
100
-
-
300
-
ns
-
50
-
*: Pulse test : tPâ¤300µs, Duty cycleâ¤2%
KSD-T0O085-000
1
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