STA3350L Datasheet, PDF (1/6 Pages) KODENSHI KOREA CORP. – PNP Silicon Transistor

Applications
• Power amplifier application
• High current switching application
Features
• Low saturation voltage:
V_CE(sat)=-0.15V Typ. @ I_C=-1A, I_B=-50mA
• Large collector current capacity: I_C=-3A
STA3350L
PNP Silicon Transistor
PIN Connection
1: Emitter 2 :Collector 3: Base
Ordering Information
Type NO.
STA3350L
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation(Ta=25°C)
Junction temperature
Storage temperature range
* : Single pulse, tp= 300 ㎲
Marking
STA3350
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP*
P_C
T_J
T_stg
Package Code
TO-92L
Rating
-50
-50
-6
-3
-6
1
150
-55~150
[Ta=25℃]
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
KSD-T0D011-000
1