STA3250Q Datasheet, PDF (1/6 Pages) KODENSHI KOREA CORP. – PNP Silicon Transistor

STA3250Q
PNP Silicon Transistor
Applications
• Power amplifier application
• High current switching application
PIN Connection
Features
• Low saturation voltage:
V_CE(sat)=-0.15V Typ. @ I_C=-1A, I_B=-50mA
• Large collector current capacity: I_C=-2A
• Small and compact SMD type package
SOT-223
Ordering Information
Type NO.
STA3250Q
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature range
Marking
STA3250□
□ : Year & Week Code
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
P_C*
T_J
T_stg
Package Code
SOT-223
Rating
-50
-50
-5
-2
1.1
1.5
150
-55~150
[Ta=25℃]
Unit
V
V
V
A
W
W
°C
°C
Characteristic
Symbol
Thermal resistance Junction-ambient
R_th(J-A)
R_th(J-A) *
* Device mounted on ceramic substrate (250mm²â…¹0.8t)
Typ.
-
-
Max
113.6
83.3
Unit
℃/W
KSD-T5A001-002
1