STA3073F Datasheet, PDF (1/7 Pages) KODENSHI KOREA CORP. – PNP Silicon Transistor

Applications
 Power amplifier application
 High current switching application
Features
 High collector breakdown voltage
: V_CEO=-120V
 Low collector saturation voltage
: V_CE(sat)=-0.5V(Max.)
Ordering Information
Type NO.
STA3073F
Marking
P73
Marking Diagram
P73
YWW
Column 1: Device Code
Column 2: Year & Week Code
STA3073F
PNP Silicon Transistor
PIN Connection
SOT-89
Package Code
SOT-89
Absolute Maximum Ratings
Characteristic
Symbol
Collector-base voltage
V_CBO
Collector-emitter voltage
V_CEO
Emitter-base voltage
V_EBO
I_C
Collector current
I_CP*
Collector Power dissipation
P_C
P_C**
Junction temperature
T_J
Storage temperature range
T_stg
* : Single pulse, tp= 300 ㎲
** : Device mounted on ceramic substrate (250mm²â…¹0.8t)
KSD-T5B032-000
Rating
-120
-120
-6
-1
-2
0.5
1
150
-55~150
(Ta=25℃)
Unit
V
V
V
A(DC)
A(Pulse)
W
C
C
1