SRC1231S Datasheet, PDF (1/4 Pages) KODENSHI KOREA CORP. – Switching application

SRC1231S
NPN Silicon Transistor
Descriptions
• Switching application
• Interface circuit and driver
circuit application
PIN Connection
COLLECTOR
Features
• With built-in bias resistor
• Simplify circuit design
• Reduce a quantity of parts and
manufacturing process
• High packing density
Ordering Information
B
E
C
R₁
BASE
R₁ = 2.2KΩ
SOT-23
EMITTER
Type NO.
SRC1231S
Marking
C31 □
①②
Package Code
SOT-23
①Device Code ②Year&Week Code
Absolute Maximum Ratings
(Ta=25°C)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_stg
30
V
15
V
5
V
300
mA
200
mW
150
°C
-55 ~ 150
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector-Emitter saturation voltage
DC current gain
Input resistor (Input to base)
Transition frequency
* : Characteristic of transistor only
BV_CBO
BV_CEO
BV_EBO
I_CBO
V_CE(sat)
h_FE
R₁
f_T^*
I_C=50μA, I_E=0
I_C=1mA, I_B=0
I_E=50μA, I_C=0
V_CB=30V, I_E=0
I_C=50mA, I_B=2.5mA
V_CE=5V, I_C=50mA
-
V_CE=10V
I_E=50mA, f=100MHz
KSD-R5C045-000
(Ta=25°C)
Min. Typ. Max. Unit
30
-
-
V
15
-
-
V
5
-
-
V
-
-
0.5
μA
-
60 150 mV
200 350 800
-
1.54 2.2 2.86 KΩ
-
200
-
MHz
1