SNN4010D Datasheet, PDF (1/7 Pages) KODENSHI KOREA CORP. – N-Ch Trench MOSFET

SNN4010D
N-Ch Trench MOSFET
Power Switching Application
Features
 Drain-source breakdown voltage: BV_DSS=100V
 Low gate charge device
 Low drain-source On resistance: R_DS(on)=25mΩ (Typ.)
 Advanced trench process technology
 High avalanche energy, 100% test
Ordering Information
Part Number
Marking
Package
SNN4010D
SNN4010
TO-252
D
G
S
TO-252
Marking Information
SNN
4010
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (T_C=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
V_DSS
V_GSS
Drain current (DC) ^*
Drain current (Pulsed) ^*
Single pulsed avalanche energy ^{(Note 1)}
Single avalanche current
Power dissipation
Operating junction temperature
Storage temperature range
T_c=25C
I_D
T_c=100C
I_DM
E_AS
I_AS
P_D
T_J
T_stg
* Limited only maximum junction temperature
Rev. date: 14-MAR-13
KSD-T6O041-001
Rating
Unit
100
V
20
V
45
A
35
A
180
A
163
mJ
25.5
A
84
W
150
C
-55 to 150
C
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