SNN3515D Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – N-CHannel Enhancement Mode MOSFET

SNN3515D
N-Channel Enhancement Mode MOSFET
Features
 V_DSS = 150V, I_D = 35A
 Low drain-source On resistance:
R_DS(on) = 35mΩ (Typ.) @ V_GS = 10V, I_D = 10A
R_DS(on) = 40mΩ (Typ.) @ V_GS = 6V, I_D = 8A
 Reliable and Rugged
 Lead Free and Green devices available (RoHS Compliant)
Applications
 Power Management in TV Converter
 DC-DC Converter
Ordering Information
Part Number
Marking
Package
SNN3515D
SNN3515
TO-252
D
G
S
TO-252
Marking Information
SNN
3515
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (T_C=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) ^*
Drain current (Pulsed) ^*
Single pulsed avalanche energy ^{(Note 1)}
Power dissipation
Operating junction temperature
Storage temperature range
V_DSS
V_GSS
T_c=25C
I_D
T_c=100C
I_DM
E_AS
P_D
T_J
T_stg
* Limited only maximum junction temperature
Rev. date: 28-MAY-13
KSD-T6O043-000
Rating
Unit
150
V
25
V
35
A
22
A
120
A
100
mJ
104
W
150
C
-55 to 150
C
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