SNN2515D Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – N-CHannel Enhancement Mode MOSFET

SNN2515D
N-Channel Enhancement Mode MOSFET
Features
 V_DSS = 150V, I_D = 25A
 Low drain-source On resistance:
R_DS(on) = 55mΩ (Typ.) @ V_GS = 10V, I_D = 12A
R_DS(on) = 60mΩ (Typ.) @ V_GS = 5V, I_D = 10A
 High power and current handing capability
 Lead Free and Green devices available (RoHS Compliant)
Applications
 Power Management in TV Converter
 DC-DC Converter
Ordering Information
Part Number
Marking
Package
SNN2515D
SNN2515
TO-252
D
G
S
TO-252
Marking Information
SNN
2515
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (T_C=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) ^{(Note 1)}
Drain current (Pulsed) ^{(Note 1)}
Power dissipation
Operating junction temperature
Storage temperature range
V_DSS
V_GSS
T_c=25C
I_D
T_c=100C
I_DM
P_D
T_J
T_stg
Rating
150
20
25
15.8
100
83.3
150
-55 to 150
Unit
V
V
A
A
A
W
C
C
Rev. date: 05-JUN-13
KSD-T6O044-000
www.auk.co.kr
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