SNN0630Q Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – Advanced N-Ch Power MOSFET

SNN0630Q
Advanced N-Ch Trench MOSFET
Portable Equipment Application
Features
 Low On-state resistance: 28m at V_GS = 10V, I_D = 2.9A
 Low gate charge: Q_g= 4.5nC (Typ.)
 High performance trench technology for extremely low R_DS(on)
 100% avalanche tested
 Halogen free and RoHS compliant device
Ordering Information
Part Number
Marking
Package
G
D
S
SNN0630Q
SNN0630
SOT-223
D
SOT-223
Marking Information
SNN0630
YWW
Column 1: Device Code
Column 2: Production Information
e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (T_C=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) ^*
Drain current (Pulsed) ^*
Single pulsed avalanche energy ^{(Note 2)}
Repetitive avalanche current ^{(Note 1)}
Repetitive avalanche energy ^{(Note 1)}
Power dissipation
Junction temperature
Storage temperature range
V_DSS
V_GSS
I_D
T_c=25C
T_c=70C
I_DM
E_AS
I_AR
E_AR
P_D
T_J
T_stg
* Limited only maximum junction temperature
Rating
30
20
5.8
4.64
23.2
72
5.8
0.2
2
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
Rev. date: 23-NOV-12
KSD-T5A015-000
www.auk.co.kr
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