SNN01Z60Q Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – Logic Level gat Drive Application

SNN01Z60Q
Logic Level N-Ch Power MOSFET
Logic Level Gate Drive Application
Features
• Logic level gate drive
• Max. R_DS(ON) = 135mΩ at V_GS = 10V, I_D = 0.5A
• Low R_DS(on) provides higher efficiency
• ESD protected: 1000V (HBM ±500V)
• Halogen free and RoHS compliant device
Ordering Information
Part Number
Marking
Package
SNN01Z60Q
SNN01Z60
SOT-223
G
DS
D
SOT-223
Marking Information
SNN01Z60
YWW
Column 1: Device Code
Column 2: Production Information
e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (T_C=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) ^*
Drain current (Pulsed) ^*
Single pulsed avalanche energy ^{(Note 2)}
Repetitive avalanche current ^{(Note 1)}
Repetitive avalanche energy ^{(Note 1)}
Power dissipation
Junction temperature
Storage temperature range
V_DSS
V_GSS
T_c=25°C
I_D
T_c=100°C
I_DM
E_AS
I_AR
E_AR
P_D
T_J
T_stg
* Limited only maximum junction temperature
Rating
60
±20
1
0.63
4
35
1
0.18
1.8
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
°C
°C
Rev. date: 24-SEP-12
KSD-T5A014-000
www.auk.co.kr
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