SNN01Z10D Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – Logic level N-CH Power MOWFET

SNN01Z10D
Logic Level N-Ch Power MOSFET
Logic Level Gate Drive Application
Features
 Logic level gate drive
 Max. R_DS(ON) = 0.24 at V_GS = 10V, I_D = 0.5A
 Low R_DS(on) provides higher efficiency
 ESD protected: 2000V (HBM ±1000V)
 Halogen free and RoHS compliant device
Ordering Information
Part Number
Marking
Package
SNN01Z10D
SNN01Z10
TO-252
D
G
S
TO-252
Marking Information
SNN
01Z10
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (T_C=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) ^*
Drain current (Pulsed) ^*
Single pulsed avalanche energy ^{(Note 2)}
Repetitive avalanche current ^{(Note 1)}
Repetitive avalanche energy ^{(Note 1)}
Power dissipation
Junction temperature
Storage temperature range
V_DSS
V_GSS
I_D
T_c=25C
T_c=100C
I_DM
E_AS
I_AR
E_AR
P_D
T_J
T_stg
* Limited only maximum junction temperature
Rating
100
20
1
0.63
4
35
1
1.8
18
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
Rev. date: 17-JAN-12
KSD-T6O039-000
www.auk.co.kr
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