SMNY2Z30 Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – SWITCHING REGULATOR APPLICATION

SMNY2Z30
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
 High voltage: BV_DDS=300V (Min.)
 Low gate charge: Q_g=2.9nC (Typ.)
 Low drain-source On resistance: R_DS(on)=8Ω (Max.)
 Built-in protection zener diode
 RoHS compliant device
Ordering Information
Part Number
Marking
Package
SMNY2Z30
SMNY2Z30
TO-92
GDS
TO-92
Marking Information
SMNY
2Z30
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (T_a=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) ^*
Drain current (Pulsed) ^*
Avalanche current ^{(Note 2)}
Single pulsed avalanche energy ^{(Note 2)}
Repetitive avalanche current ^{(Note 1)}
Repetitive avalanche energy ^{(Note 1)}
Power dissipation
Junction temperature
Storage temperature range
V_DSS
V_GSS
I_D
T_a=25C
T_a=100C
I_DM
I_AS
E_AS
I_AR
E_AR
P_D
T_J
T_stg
* Limited only maximum junction temperature
Rev. date: 08-JUN-11
KSD-T0A075-000
Rating
Unit
300
V
30
V
0.2
A
0.12
A
1
A
1.3
A
182.6
mJ
0.2
A
1.5
mJ
0.6
W
150
C
-55~150
C
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