SMN18T50FD Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – SWITCHING REGULATOR APPLICATION

SMN18T50FD
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
 Drain-Source breakdown voltage: BV_DSS = 500V
 Low gate charge: Q_g=65nC (Typ.)
 Low drain-source On resistance: R_DS(on)=0.21Ω (Typ.)
 100% avalanche tested
 RoHS compliant device
Ordering Information
Part Number
Marking
Package
SMN18T50FD
SMN18T50
TO-220F-3L
GDS
TO-220F-3L
Marking Information
AU_AK_UK
SMNF1^{ΔY8YMTMD5DD}0 ^D
SDB20D45
Column 1: Manufacturer
Column 2: Production Information
e.g.) FYMDD
-. F: Factory Management Code
-. YMDD: Date Code (Year, Month, Date)
Column 3: Device Code
Absolute maximum ratings (T_C=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) ^*
Drain current (Pulsed) ^*
Single pulsed avalanche energy ^{(Note 2)}
Repetitive avalanche current ^{(Note 1)}
Repetitive avalanche energy ^{(Note 1)}
Power dissipation
Peak diode recovery dv/dt ^{(Note 3)}
V_DSS
V_GSS
I_D
T_c=25C
T_c=100C
I_DM
E_AS
I_AR
E_AR
P_D
dv/dt
Junction temperature
T_J
Storage temperature range
T_stg
* Drain current limited by maximum junction temperature
Rev. date: 27-MAR-13
KSD-T0O097-001
Rating
500
30
18
11.4
72
900
18
4.8
48
4.5
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
V/ns
C
C
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