SMN03T80IS Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – SWITCHING REGULATOR APPLICATION

SMN03T80IS
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
 BV_DSS=800V Min.
 Low gate charge: Q_g=19nC (Typ.)
 Low drain-source On resistance: R_DS(on)=4.2Ω (Max.)
 RoHS compliant device
 100% avalanche tested
Ordering Information
Part Number
Marking
Package
SMN03T80IS
SMN03T80
I-PAK
(Short Lead)
GDS
I-PAK
Marking Information
SMN
03T80
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (T_C=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) ^*
Drain current (Pulsed) ^*
Single pulsed avalanche energy ^{(Note 2)}
Repetitive avalanche current ^{(Note 1)}
Repetitive avalanche energy ^{(Note 1)}
Power dissipation
Peak diode recovery dv/dt ^{(Note 3)}
V_DSS
V_GSS
I_D
T_c=25C
T_c=100C
I_DM
E_AS
I_AR
E_AR
P_D
dv/dt
Junction temperature
T_J
Storage temperature range
T_stg
* Limited only maximum junction temperature
Rev. date: 16-AUG-11
KSD-T6Q010-000
Rating
800
30
3
1.83
12
200
3
7
70
4.5
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
V/ns
C
C
www.auk.co.kr
1 of 8