SMN01Z30Q Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – Advanced N-Ch Power MOSFET

SMN01Z30Q
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
 High Voltage : BV_DSS=300V(Min.)
 Low C_rss : C_rss=3.2pF(Typ.)
 Low gate charge : Qg=2.9nC(Typ.)
 Low R_DS(on) : R_DS(on)=8Ω(Max.)
PIN Connection
D
D
G
Ordering Information
Type No.
Marking
Package Code
G
D
S
S
SMN01Z30Q
SMN01Z30
SOT-223
SOT-223
Marking Diagram
SMN01Z30
YWW
Column 1 : Device Code
Column 2 : Production Information
e.g.) YWW
-. Y : Year Code
-. WW : Week Code
Absolute maximum ratings (T_C=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
V_DSS
Gate-source voltage
V_GSS
Drain current (DC) ^*
Drain current (Pulsed) ^*
I_D
T_C=25C
T_C=100C
I_DM
Power dissipation
P_D
Avalanche current (Single)

I_AS
Single pulsed avalanche energy 
E_AS
Avalanche current (Repetitive)

I_AR
Repetitive avalanche energy

E_AR
Junction temperature
T_J
Storage temperature range
T_stg
* Limited by maximum junction temperature
Rating
300
20
1.3
0.78
5.2
2.1
1.3
182.6
1.3
0.2
150
-55~150
Characteristic
Thermal
resistance
Junction-ambient
Symbol
R_th(J-A)
Typ.
-
Max.
60
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Unit
C/W
KSD-T5A005-000
1