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SMK830P-1 Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – SWITCHING REGULATOR APPLICATIONS
SMK830P
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
 High Voltage : BVDSS=500V(Min.)
 Low Crss : Crss=33pF(Typ.)
 Low gate charge : Qg=16nC(Typ.)
 Low RDS(on) : RDS(on)=1.5Ω(Max.)
PIN Connection
D
Ordering Information
Type No.
Marking
SMK830P
SMK830
Package Code
TO-220AB
GDS
G
S
TO-220AB
Marking Diagram
AUK
GYMDD
SMK830
Column 1 : Manufacturer
Column 2 : Production Information
e.g.) GYMDD
-. G : Factory Management Code
-. YMDD : Date Code (Year, Month, Date)
Column 3 : Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current (DC) *
Drain current (Pulsed) *
ID
TC=25C
TC=100C
IDM
Power dissipation
PD
Avalanche current (Single)
②
IAS
Single pulsed avalanche energy ②
EAS
Avalanche current (Repetitive)
①
IAR
Repetitive avalanche energy
①
EAR
Junction temperature
TJ
Storage temperature range
Tstg
* Limited by maximum junction temperature
Rating
500
30
4.5
2.9
18
70
4.5
250
4.5
5.0
150
-55~150
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max.
1.78
62.5
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Unit
C/W
KSD-T0P025-002
1