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| SMK0860P Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – SWITCHING REGULATOR APPLICATIONS | |||
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Semiconductor
SMK0860P
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
⢠High Voltage: BVDSS=600V(Min.)
⢠Low Crss : Crss=9.7pF(Typ.)
⢠Low gate charge : Qg=22nC(Typ.)
⢠Low RDS(on) :RDS(on)=1.2Ω(Max.)
PIN Connection
D
G
Ordering Information
Type No.
Marking
Package Code
GDS
S
SMK0860P
SMK0860
TO-220AB-3L
TO-220AB-3L
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage
Drain current (DC) *
VGSS
(Tc=25â)
ID
(Tc=100â)
Drain current (Pulsed) *
IDM
Drain power dissipation
PD
Avalanche current (Single)
â¡
IAS
Single pulsed avalanche energy â¡
EAS
Avalanche current (Repetitive) â
IAR
Repetitive avalanche energy
â
EAR
Junction temperature
TJ
Storage temperature range
Tstg
* Limited by maximum junction temperature
Rating
600
±30
7.5
4.7
30
90
7.5
325
7.5
21.7
150
-55~150
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-a)
Typ.
-
-
Max
1.38
62.5
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
Unit
â/W
KSD-T0P024-000
1
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