SMK0465IS Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – SWWITCHINNGREGGULATOORAPPLICATIOON

SMK0465IS
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
• Drain-source breakdown voltage: BV_DSS=650V
• Low gate charge: Q_g=11.2nC (Typ.)
• Low drain-source On-resistance: R_DS(on)=3Ω (Max.)
• RoHS compliant device
• Halogen free package
Ordering Information
Part Number
Marking
Package
SMK0465IS
SMK0465
I-PAK
(Short lead)
GDS
I-PAK (Short Lead)
Marking Information
SMK
0465
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (T_C=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) ^*
Drain current (Pulsed) ^*
Single avalanche current ^{(Note 2)}
Single pulsed avalanche energy ^{(Note 2)}
Repetitive avalanche current ^{(Note 1)}
Repetitive avalanche energy ^{(Note 1)}
Power dissipation
Junction temperature
Storage temperature range
V_DSS
V_GSS
T_c=25°C
I_D
T_c=100°C
I_DM
I_AR
E_AS
I_AR
E_AR
P_D
T_J
T_stg
* Limited only maximum junction temperature
Rev. date: 16-JUL-12
KSD-T6Q016-000
Rating
Unit
650
V
±30
V
4
A
2.5
A
16
A
4
A
81.5
mJ
4
A
3.4
mJ
48
W
150
°C
-55~150
°C
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