SMK0460IS Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – Advanced N-Ch Power MOSFET

SMK0460IS
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
 Drain-Source breakdown voltage: BV_DSS=600V (Min.)
 Low gate charge: Q_g=12nC (Typ.)
 Low drain-source On resistance: R_DS(on)=2.1Ω (Typ.)
 100% avalanche tested
 RoHS compliant device
Ordering Information
Part Number
SMK0460IS
Marking
SMK0460
Package
I-PAK
(Short Lead)
GDS
I-PAK
Marking Information
SMK
0460
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (T_C=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) ^*
Drain current (Pulsed) ^*
Avalanche current ^{(Note 2)}
Single pulsed avalanche energy ^{(Note 2)}
Repetitive avalanche current ^{(Note 1)}
Repetitive avalanche energy ^{(Note 1)}
Power dissipation
Junction temperature
Storage temperature range
V_DSS
V_GSS
I_D
T_c=25C
T_c=100C
I_DM
I_AS
E_AS
I_AR
E_AR
P_D
T_J
T_stg
* Limited only maximum junction temperature
Rev. date: 12-MAR-13
KSD-T6Q015-002
Rating
600
30
4
2.53
16
4
225
4
10
48
150
-55~150
Unit
V
V
A
A
A
A
mJ
A
mJ
W
C
C
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