SMK0460FG Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – Advanced N-Ch Power MOSFET

SMK0460FG
Advanced N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
 Low drain-source On resistance: R_DS(on)=2.1Ω (Typ.)
 Low gate charge: Q_g=12nC (Typ.)
 Low reverse transfer capacitance: C_rss=9.8pF (Typ.)
 RoHS compliant device
 100% avalanche tested
Ordering Information
Part Number
Marking
Package
SMK0460FG
SMK0460G
TO-220FT-3L
(Short Dambar)
GDS
TO-220FT-3L
Marking Information
AU_AK_UK
S^◎M^△K0^{ΔY4YM6MD0GDD D}
SDB20D45
Column 1: Manufacturer
Column 2: Production Information
e.g.) ◎△YMDD
-. ◎: Option Code
-. △: Factory Management Code
-. YMDD: Date Code (Year, Month, Daily)
Column 3: Device Code
Absolute maximum ratings (T_C=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) ^*
Drain current (Pulsed) ^*
Single avalanche energy ^{(Note 2)}
Repetitive avalanche current ^{(Note 1)}
Repetitive avalanche energy ^{(Note 1)}
Power dissipation
Junction temperature
Storage temperature range
V_DSS
V_GSS
I_D
T_c=25C
T_c=100C
I_DM
E_AS
I_AR
E_AR
P_D
T_J
T_stg
* Limited only maximum junction temperature
Rev. date: 23-JUN-14
KSD-T0O151-000
Rating
600
30
4
2.53
16
225
4
10
30
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
www.auk.co.kr
1 of 8