SMK0260IS Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – SWWITCHINNGREGGULATOORAPPLICATIOON

SMK0260IS
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
• Drain-Source breakdown voltage: BV_DSS=600V (Min.)
• Low gate charge: Q_g=7nC (Typ.)
• Low drain-source On resistance: R_DS(on)=3.9Ω (Typ.)
• 100% avalanche tested
• RoHS compliant device
Ordering Information
Part Number
SMK0260IS
Marking
SMK0260
Package
I-PAK
(Short Lead)
GDS
I-PAK
Marking Information
SMK
0260
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (T_C=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) ^*
Drain current (Pulsed) ^*
Avalanche current ^{(Note 2)}
Single pulsed avalanche energy ^{(Note 2)}
Repetitive avalanche current ^{(Note 1)}
Repetitive avalanche energy ^{(Note 1)}
Power dissipation
Junction temperature
Storage temperature range
V_DSS
V_GSS
T_c=25°C
I_D
T_c=100°C
I_DM
I_AS
E_AS
I_AR
E_AR
P_D
T_J
T_stg
* Limited only maximum junction temperature
Rev. date: 12-MAR-13
KSD-T6Q018-000
Rating
600
±30
2
1.35
8
2
130
2
5.6
48
150
-55~150
Unit
V
V
A
A
A
A
mJ
A
mJ
W
°C
°C
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