SG276 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SG276

PhotoInterrupter(Transimissive)
SG276
The SG276 photointerrupter high-performance standard
type,combines high-output GaAs IRED with high sensitive
phototransistor
DIMENSIONS
(Unit : mm)
FEATURES
▪ PWB direct mount type
▪ GAP : 3.3mm
▪ With the installation positioning boss
▪ Compact
APPLICATIONS
▪ VTR
▪ Cassette mecha
▪ Car stereo
▪ Printers
MAXIMUM RATINGS
(Ta=25°C)
Item
Symbol
Rating
Unit
Power dissipation
P_D
Input ^{Forward current}
I_F
Reverse voltage
V_R
Pulse forward current ^*1
I_FP
75
mW
50
mA
5
V
0.5
A
Collector power dissipation
P_C
75
mW
Output ^{Collector current}
I_C
20
mA
Collector-Emitter voltage V_CEO
30
V
Emitter-Collector voltage V_ECO
5
V
Operating temp.^*2
Topr.
-20 ~ +85
°C
Storage temp.^*2
Tstg.
-30 ~ +85
°C
Soldering temp.^*3
Tsol.
260
°C
*1. Pulse width : tw≤100us. period T=10ms
*2. No icebound or dew *3. For MAX. 5 seconds at the position of 1mm from the resin edge.
ELECTRO-OPTICAL CHARACTERISTICS
Item
Symbol
Conditions
Min.
Input
Output
Trans-
mission
Forward voltage
Reverse current
Peak wavelength
Collector dark current
Light current
Leakage current
C-E saturation voltage
Rise time
Fall time
V_F
I_R
λ_p
I_CEO
I_C
I_CEOD
V_CE(sat)
tr
tf
I_F=20mA
-
V_R=5V
-
I_F=20mA
-
V_CE=10V,0 lx
-
I_F=20mA,V_CE=5V (Non-Shading) _0.2
I_F=20mA,V_CE=5V (Shading)
-
I_F=20mA,I_C=0.05mA
-
V_CC=5V,I_C=0.1mA,R_L=1kΩ
-
-
Typ.
1.2
-
940
1
-
0.5
0.15
50
50
(Ta=25°C)
Max. Unit.
1.4 V
10 µA
-
nm
100 nA
5 mA
10 µA
0.4 V
-
µs
-
µs
-1-