SBT5551F Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

SBT5551F
NPN Silicon Transistor
Descriptions
• General purpose amplifier
• High voltage application
Features
• high collector breakdown voltage :
V_CBO = 180V, V_CEO = 160V
• Low collector saturation voltage :
V_CE(sat)=0.5V(MAX.)
• Complementary pair with SBT5401F
PIN Connection
1
2
3
SOT-23F
Ordering Information
Type NO.
SBT5551F
Marking
FNF □
①②
① Device Code ② Year&Week Code
Package Code
SOT-23F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
180
160
6
600
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO
I_C=100μA, I_E=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
BV_CEO
BV_EBO
I_C=1mA, I_B=0
I_E=10μA, I_C=0
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
I_CBO
I_EBO
h_{FE (1)}
h_{FE (2)}
V_CB=120V, I_E=0
V_EB=4V, I_C=0
V_CE=5V, I_C=1mA
V_CE=5V, I_C=10mA
DC current gain
Collector-Emitter saturation voltage
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
h_{FE (3)}
V_CE(sat)(1)^*
V_CE(sat)(2)^*
V_BE(sat)(1)^*
V_BE(sat)(2)*
f_T
V_CE=5V, I_C=50mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
V_CE=10V, I_C=10mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
* : Pulse Tester : Pulse Width ≤300μs, Duty Cycle ≤2.0%
KSD-T5C076-000
Min.
180
160
6
-
-
80
80
30
-
-
-
-
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
(Ta=25°C)
Max. Unit
-
V
-
V
-
V
100 nA
100 nA
-
250
-
-
0.2
V
0.5
V
1
V
1
V
400 MHz
6
pF
1