SBT5401 Datasheet, PDF (1/5 Pages) AUK corp – PNP Silicon Transistor

SBT5401
PNP Silicon Transistor
Description
• General purpose amplifier
• High voltage application
Features
• High collector breakdown voltage :
V_CBO = -160V, V_CEO = -160V
• Low collector saturation voltage :
V_CE(sat)=-0.5V(MAX.)
• Complementary pair with SBT5551
Ordering Information
Type NO.
Marking
SBT5401
NFN □
①②
①Device Code ② Year&Week Code
Absolute maximum ratings
Characteristic
Symbol
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
PIN Connection
B
E
C
SOT-23
Package Code
SOT-23
Ratings
-160
-160
-5
-600
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
KSD-T5C079-000
1