SBT3906UF Datasheet, PDF (1/4 Pages) AUK corp – PNP Silicon Transistor

SBT3906UF
PNP Silicon Transistor
Descriptions
• General small signal application
• Switching application
PIN Connection
Features
• Low collector saturation voltage
• Collector output capacitance
Ordering Information
Type NO.
SBT3906UF
Marking
EQ □
①②
①Device Code ② Year&Week Code
3
1
2
SOT-323F
Package Code
SOT-323F
Absolute maximum ratings
Characteristic
Symbol
Ratings
Ta=25°C
Unit
Collector-Base voltage
V_CBO
-40
V
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature range
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
-40
V
-5
V
-200
mA
200
mW
150
°C
-55~150
°C
* : Package mounted on 99.5% alumina 10×8×0.6mm
Electrical Characteristics
Characteristic
Symbol
Test Condition
Ta=25°C
Min. Typ. Max. Unit
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
BV_CBO
BV_CEO
BV_EBO
I_CEX
h_FE
V_CE(sat)
f_T
C_ob
t_d
t_r
t_s
t_f
I_C=-10μA, I_E=0
I_C=-1mA, I_B=0
I_E=-10μA, I_C=0
V_CE=-30V, V_EB=-3V
V_CE=-1V, I_C=-10mA
I_C=-50mA, I_B=-5mA
V_CE=-5V, I_C=-10mA,
f=100MHz
V_CB=-5V, I_E=0, f=1MHz
V_CC=-3V, I_C=-10mA,
I_B1=-1mA
V_CC=-3V,I_C=-10mA,
I_B1=I_B2=-1mA
-40
-
-40
-
-5
-
-
-
100
-
-
-
250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-50
300
-0.4
-
4.5
35
35
225
75
V
V
V
nA
-
V
MHz
pF
ns
ns
ns
ns
KSD-T5D014-001
1