SBT3906F Datasheet, PDF (1/4 Pages) AUK corp – PNP Silicon Transistor

SBT3906F
PNP Silicon Transistor
Descriptions
• General small signal application
• Switching application
Features
• Low collector saturation voltage
• Collector output capacitance
• Complementary pair with SBT3904F
Ordering Information
Type NO.
Marking
SBT3906F
2A □
①②
①Device Code ② Year&Week Cod
PIN Connection
1
2
Package Code
SOT-23F
3
SOT-23F
Absolute maximum ratings
Characteristic
Symbol
Ratings
Collector-Base voltage
V_CBO
Collector-Emitter voltage
V_CEO
Emitter-base voltage
V_EBO
Collector current
I_C
Collector dissipation
P_C*
Junction temperature
T_j
Storage temperature range
T_stg
* : Package mounted on 99.5% alumina 10×8×0.6mm
-40
-40
-5
-200
350
150
-55~150
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Collector-Base breakdown voltage
BV_CBO I_C=-10μA, I_E=0
-40
Collector-Emitter breakdown voltage BV_CEO I_C=-1mA, I_B=0
-40
Emitter-Base breakdown voltage
BV_EBO I_E=-10μA, I_C=0
-5
Collector cut-off current
I_CEX
V_CE=-30V, V_EB=-3V
-
DC current gain
h_FE
V_CE=-1V, I_C=-10mA
100
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
I_C=-50mA, I_B=-5mA
V_CE=-20V, I_C=-10mA,
f=100MHz
V_CB=-5V, I_E=0, f=1MHz
-
250
-
Delay time
Rise time
t_d
V_CC=-3V_dc, V_BE(off)=-0.5V_dc,
-
t_r
I_C=-10mA_dc, I_B1=-1mA_dc
-
Storage time
Fall Time
t_s
V_CC=-3V_dc,I_C=-10mA_dc,
-
t_f
I_B1=I_B2=-1mA_dc
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Ta=25°C
Max. Unit
-
V
-
V
-
V
-50
nA
300
-
-0.4
V
-
MHz
4.5
pF
35
ns
35
ns
225
ns
75
ns
KSD-T5C090-000
1