SBT3906 Datasheet, PDF (1/4 Pages) AUK corp – PNP Silicon Transistor

SBT3906
PNP Silicon Transistor
Descriptions
• General small signal application
• Switching application
PIN Connection
Features
• Low collector saturation voltage
• Collector output capacitance
1
• Complementary pair with SBT3904
2
Ordering Information
Type NO.
SBT3906
Marking
2A □
①②
①Device Code ②Year&Week Code
3
SOT-23
Package Code
SOT-23
Absolute Maximum Ratings
Characteristic
Symbol
Collector-base voltage
Collector-emitter voltage
V_CBO
V_CEO
Emitter-base voltage
V_EBO
Collector current
I_C
Collector power dissipation
*_PC
Junction temperature
T_j
Storage temperature range
T_stg
* : Package mounted on 99.5% alumina 10×8×0.6mm
Rating
-40
-40
-5
-200
350
150
-55~150
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CEX
h_FE
V_CE(sat)
f_T
C_ob
t_d
t_r
t_s
t_f
Test Condition
I_C=-10μA, I_E=0
I_C=-1mA, I_B=0
I_E=-10μA, I_C=0
V_CE=-30V, V_EB=-3V
V_CE=-1V, I_C=-10mA
I_C=-50mA, I_B=-5mA
V_CE=-20V, I_C=-10mA,
f=100MHz
V_CB=-5V, I_E=0, f=1MHz
V_CC=-3V_dc, V_BE(off)=-0.5V_dc,
I_C=-10mA_dc, I_B1=-1mA_dc
V_CC=-3V_dc,I_C=-10mA_dc,
I_B1=I_B2=-1mA_dc
Min.
-40
-40
-5
-
100
-
Typ.
-
-
-
-
-
-
Ta=25°C
Max. Unit
-
V
-
V
-
V
-50
nA
300
-
-0.4
V
-
250
-
MHz
-
4.5
-
pF
-
35
-
ns
-
35
-
ns
-
225
-
ns
-
75
-
ns
KSD-T5C047-001
1