SBT3904U Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

SBT3904U
NPN Silicon Transistor
Descriptions
• Small signal application
• Switching application
Features
• Low V_CE(SAT) : 0.3V max @ I_C=50 ㎃
• High speed switching : t_f=50 ㎱ max @ I_C=10 ㎃
• Complementary pair with SBT3906U
PIN Connection
3
1
2
Ordering Information
Type NO.
SBT3904U
Marking
1A □
①②
①Device Code ② Year&Week Code
Package Code
SOT-323
SOT-323
Absolute maximum ratings
Characteristic
Symbol
Rating
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_J
T_stg
60
40
6
200
350
150
-55~150
* : Device mounted on 99.5% alumina 10×8×0.6mm
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Collector-Base breakdown voltage
BV_CBO I_C=10μA, I_E=0
60
Collector-Emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
40
Emitter-Base breakdown voltage
BV_EBO I_E=10μA, I_C=0
6
Collector cut-off current
I_CEX
V_CE=30V, V_BE=-3V
-
DC current gain
h_FE
V_CE=1V, I_C=10mA
100
Collector-Emitter saturation voltage
Transition frequency
V_CE(sat)
f_T
I_C=50mA, I_B=5mA
V_CE=20V, I_C=10mA,
f=100MHz
-
300
Collector output capacitance
C_ob
V_CB=5V, I_E=0, f=1MHz
-
Turn on delay time
Rise time
t_d
V_CC=3V, V_BE(off)=0.5V
-
t_r
I_C=10mA, I_B1=1mA
-
Storage time
Fall Time
t_s
V_CC=3V,I_C=10mA,
-
t_f
I_B1=-I_B2=1mA
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Ta=25°C
Unit
V
V
V
㎃
㎽
℃
℃
Ta=25°C
Max. Unit
-
V
-
V
-
V
50
㎁
300
-
0.3
V
-
㎒
4
㎊
35
㎱
35
㎱
200
㎱
50
㎱
KSD-T5D005-000
1