SBT3904 Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

SBT3904
NPN Silicon Transistor
Descriptions
• General small signal application
• Switching application
PIN Connection
Features
• Low collector saturation voltage
• Collector output capacitance
1
• Complementary pair with SBT3906
2
Ordering Information
Type NO.
Marking
Package Code
SBT3904
1A □
①②
①Device Code ② Year&Week Code
SOT-23
3
SOT-23
Absolute maximum ratings
Characteristic
Symbol
Ratings
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
60
40
6
200
350
150
-55~150
* : Package mounted on 99.5% alumina 10×8×0.6mm
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Collector-Base breakdown voltage
BV_CBO I_C=10μA, I_E=0
60
Collector-Emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
40
Emitter-Base breakdown voltage
BV_EBO I_E=10μA, I_C=0
6
Collector cut-off current
I_CEX
V_CE=30V, V_EB=3V
-
DC current gain
h_FE
V_CE=1V, I_C=10mA
100
Collector-Emitter saturation voltage
Transition frequency
V_CE(sat)
f_T
I_C=50mA, I_B=5mA
V_CE=20V, I_C=10mA,
f=100MHz
-
300
Collector output capacitance
C_ob
V_CB=5V, I_E=0, f=1MHz
-
Delay time
Rise time
t_d
V_CC=3V_dc, V_BE(off)=0.5V_dc.
-
t_r
I_C=10mA_dc, I_B1=1mA_dc
-
Storage time
Fall Time
t_s
V_CC=3V_dc,I_C=10mA_dc,
-
t_f
I_B1=I_B2=1mA_dc
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Ta=25°C
Max. Unit
-
V
-
V
-
V
50
nA
300
-
0.3
V
-
MHz
4
pF
35
ns
35
ns
200
ns
50
ns
KSD-T5C013-000
1