SBT2222AF Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

SBT2222AF
NPN Silicon Transistor
Descriptions
• General purpose application
• Switching application
Features
• Low Leakage current
• Low collector saturation voltage enabling
low voltage operation
• Complementary pair with SBT2907AF
PIN Connection
1
2
3
SOT-23F
Ordering Information
Type NO.
SBT2222AF
Marking
1P □
①②
① Device Code ② Year&Week Code
Package Code
SOT-23F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
* : Package mounted on 99.5% alumina 10×8×0.6mm
Electrical Characteristics
Characteristic
Symbol
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
BV_CBO
BV_CEO
BV_EBO
I_CBO
h_FE
V_CE(sat)
Transition frequency
f_T
Collector output capacitance
C_ob
Delay time
t_d
Rise time
t_r
Storage time
t_s
Fall Time
t_f
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Ratings
75
40
5
600
350
150
-55~150
Test Condition
I_C=10μA, I_E=0
I_C=1mA, I_B=0
I_E=10μA, I_C=0
V_CB=75V, I_E=0
V_CE=10V, I_C=10mA
I_C=150mA, I_B=15mA
V_CE=20V, I_C=20mA,
f=100MHz
V_CB=10V, I_E=0, f=1MHz
V_CC=30V_dc, V_BE(off)=0.5V_dc,
I_C=150mA_dc, I_B1=15mA_dc
V_CC=30V_dc,I_C=150mA_dc,
I_B1=I_B2=15mA_dc
Min.
75
40
5
-
100
-
250
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Ta=25°C
Max. Unit
-
V
-
V
-
V
20
nA
-
-
0.4
V
-
MHz
8
pF
10
ns
25
ns
225
ns
60
ns
KSD-T5C011-000
1