PN2222 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – General Purpose Transistor

PN2222
NPN Silicon Transistor
Descriptions
• General purpose application
• Switching application
PIN Connection
C
Features
• Low Leakage current
• Low collector saturation voltage enabling
E
B
low voltage operation
C
• Complementary pair with PN2907
Ordering Information
Type NO.
Marking
PN2222
PN2222
Package Code
TO-92
B
E
TO-92
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
60
30
5
600
625
150
-55~150
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
h_FE
V_CE(sat)
f_T
C_ob
t_d
t_r
t_s
t_f
Test Condition
I_C=10μA, I_E=0
I_C=10mA, I_B=0
I_E=10μA, I_C=0
V_CB=60V, I_E=0
V_CE=10V, I_C=10mA
I_C=150mA, I_B=15mA
V_CE=20V, I_C=20mA,
f=100MHz
V_CB=10V, I_E=0, f=1MHz
V_CC=30V_dc, V_BE(off)=0.5V_dc,
I_C=150mA_dc, I_B1=15mA_dc
V_CC=30V_dc,I_C=150mA_dc,
I_B1=I_B2=15mA_dc
Min.
60
30
5
-
100
-
Typ.
-
-
-
-
-
-
Ta=25°C
Max. Unit
-
V
-
V
-
V
20
nA
-
-
0.4
V
250
-
-
MHz
-
-
8
pF
-
-
10
ns
-
-
25
ns
-
-
225
ns
-
-
60
ns
KSD-T0A003-000
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