OPD3030 Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Silicon PIN Photo Diode

OPD3030
Silicon PIN Photo Diode
HIGH SPEED SENSITIVITY
1. Structure
1.1 Chip Size : 3.00mm X 3.00mm
1.2 Chip thickness : 400±20um
1.3 Metallization : Top - Al, Bottom - Au
1.4 Passivation : Silicon Oxide
1.5 Bonding Pad Size
- Anode(top) : 160um X 160um
1.6 Active Area : 2.86mm X 2.86mm
unit : ㎛
2. Electro-Optical Characteristics
(Ta=25℃)
Parameter
Symbol Min Typ Max Unit Test Condition
Open Circuit Voltage
V_OP
0.3 0.32
V
Note(1)
Short Circuit Current
I_SC
69 86
㎂
Note(1)
Spectrum Sensitivity
λ
430 ∼ 1,100
㎚
Peak Sensing Wavelength
Forward Voltage
λ_P
940
㎚
V_F
0.5
1.3 V
I_F=10㎃
Dark Current
I_D
10 ㎁
Reverse Breakdown Voltage
B_VR
30
V
Note(1):Parallel light of 1,000Lux illumination is applied by a Tungsten lamp o
V_R=10V
I_R=10㎂
3. Maximum Ratings
Parameter
Reverse Breakdown Voltage
Junction Temperature
(Ta=25℃)
Symbol Maximum rating Unit
BVR
30
V
TJ
150
℃
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr