OPD1616N Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Silicon PIN Photo Diode

OPD1616N
Silicon PIN Photo Diode
High Speed Sensitivity
High Speed Sensitivity
1. Structure
1.1 Chip Size : 1.60mm X 1.60mm
1.2 Chip Thickness : 400±20um
1.3 Metallization : Top - Al, Bottom - Au
1.4 Passivation : Silicon Nitride
1.5 Bonding Pad Size
- Cathode(Top) : 300um X 300um
- Anode(Bottom)
1.6 Active Area : 1.40mm X 1.40mm
unit : ㎛
2. Electrical-Optical Characteristics
(Ta=25℃)
Parameter
Symbol Min Typ Max Unit Condition
Open Circuit Voltage
Short Circuit Current
Spectrum Sensitivity
V_OP
-0.3 -0.32
I_SC
-16 -20
λ
430~1,100
V
Note(1)
uA
Note(1)
nm
Peak Sensing Wavelength
λ_P
940
nm
Forward Voltage
V_F
-0.5
-1.3
V
IF=10mA
Dark Current
I_D
-5 -10 nA
VR=10V
Reverse Breakdown Voltage
BV_R
-30
V
IR=10uA
Note(1) : Parallel light of 1,000Lux illumination is applied by a Tungsten lamp of 2856k.
3. Maximum Ratings
Parameter
Reverse Breakdown Voltage
Junction Temperature
Symbol
BV_R
T_J
Rating
-30
150
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr
(Ta=25℃)
Unit
V
℃