OPD0606 Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Silicon PIN Photo Diode

OPD0606 _{High Speed Sensitivity}
Silicon PIN Photo Diode
Common cathode type PIN Photo Diode
1. Structure
1.1 Chip Size : 0.68 X 0.68mm
1.2 Chip Thickness : 280±20um
1.3 Metallization : Top - Al, Bottom - Au
1.4 Passivation : Silicon Nitride
1.5 Bonding Pad Size
- Anode(Top) : 150um
- Cathode(Bottom) : 680um X 680um
1.6 Active Area : 0.54mm X 0.54mm
unit : ㎛
2. Electrical-Optical Characteristics
(Ta=25℃)
Parameter
Symbol Min Typ Max Unit Condition
Open Circuit Voltage
Short Circuit Current
Spectrum Sensitivity
V_OP
0.3 0.32
I_SC
2
2.6
λ
430~1,100
V
Note(1)
uA
Note(1)
nm
Peak Sensing Wavelength
λ_P
780
nm
Forward Voltage
V_F
0.5
1.3
V
IF=10mA
Dark Current
I_D
5
10 nA VR=10V
Reverse Breakdown Voltage
BV_R
30
V
IR=10uA
Note(1) : Parallel light of 1,000Lux illumination is applied by a Tungsten lamp of 2856k.
3. Maximum Ratings
Parameter
Reverse Breakdown Voltage
Junction Temperature
Symbol
BV_R
T_J
Rating
30
150
(Ta=25℃)
Unit
V
℃
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr