OPB1204 Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Silicon Photo Transistor

OPB1204
Silicon Photo Transistor
1. Structure
1.1 Chip Size : 1.2mm X 0.45mm
1.2 Chip thickness : 230±20um
1.3 Metallization : Top - Al(2um), Bottom - Au
1.4 Back Metal : Au(1,000Å)
1.5 Passivation : Silicon Nitride
1.6 Bonding Pad Size
- Emitter : 130um
- Base : 60um X 60um
: Emitter Electrode
: Base Electrode
2. Electro-Optical Characteristics
(Ta=25℃)
Parameter
Symbol Min Typ Max Unit Condition
C-E Leakage Current
I_CEO
500 nA
V_CE=10V
Peak Sensing Wavelength
λ_p
880
nm
Spectrum Sensitivity
λ
500~1,050
nm
*Parallel light of 1,000lux illumination is applied by a tungsten lamp of 2856K.
3. Guaranteed Probed Electrical Characteristics
Parameter
Symbol Min Typ Max Unit
C-E Voltage
BV_CEO
60
V
C-B Voltage
BV_CBO
90
V
E-B Voltage
BV_EBO
6.5
V
E-C Voltage
BV_ECO
5
V
C-E Leakage Current I_CEO
50
nA
C-E Saturation Voltage V_CES
300 mV
Rise/Fall Time
tr/tf
15/15(Typ)
us
DC Current Gain
h_FE
400
1,600 -
(Ta=25℃)
Condition
I_CE=500uA
I_CE=50uA
I_CB=50uA
I_EC=50uA
V_CE=10V
I_C=5mA, I_B=1mA
V_CE=5V, I_C=1mA,
RL-1000Ω
V_CE=10V, Ic=1mA
4. Maximum Ratings
Parameter
Symbol
Collector-Emitter Voltage V_CEO
Emitter-Collector Voltage V_ECO
Junction Temperature T_J
(Ta=25℃)
Rating Unit
30
V
5
V
150
℃
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr