OPB1104 Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Silicon Photo Transistor

OPB1104
Silicon Photo Transistor
1. Structure
1.1 Chip Size : 0.42mm X 1.17mm
1.2 Chip thickness : 280±20um
1.3 Metallization : Top - Al, Bottom - Au
1.4 Passivation : Silicon Nitride
1.5 Bonding Pad Size
- Emitter : 130um
- Base : 60um X 60um
1.6 Active Area : 0.31mm X 0.46mm
2. Guaranteed Probed Electrical Characteristics
(Ta=25℃)
Parameter
Symbol Min Typ Max Unit
Condition
C-E Leakage Current I_CEO
100 nA
V_CE=10V
Spectrum Sensitivity
λ
450
1100 nm
Peak Sensing Wavelength λp
880
nm
C-E Voltage
BV_CEO
30
V
I_CE=500uA
C-B Voltage
BV_CBO
40
V
I_CB=50uA
E-B Voltage
BV_EBO
6
V
I_EB=50uA
E-C Voltage
BV_ECO
5
V
I_EC=50uA
C-E Saturation Voltage V_CES
DC Current Gain
h_FE
500
300 mV ^IC^{=5mA, I}B^=1mA
2500
-
V_CE=10V, Ic=1mA
3. Hfe Bin Grade
Bin Grade
A
B
C
MIN
500
800
1,300
MAX
1,000
1,400
2,500
4. Maximum Ratings
Parameter
Symbol
Collector-Emitter Voltage V_CEO
Emitter-Collector Voltage V_ECO
(Ta=25℃)
Rating Unit
30
V
5
V
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr