OPB0642 Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Silicon Photo Transistor

OPB0642
Silicon Photo Transistor
1. Structure
1.1 Chip Size : 0.62mm X 0.42mm
1.2 Chip thickness : 220±30um
1.3 Metallization : Top - Al, Bottom - Au
1.4 Passivation : Silicon Nitride
1.5 Bonding Pad Size
- Emitter : 160um
- Base : 60um X 60um
: Emitter Electrode
: Base Electrode
2. Electro-Optical Characteristics
(Ta=25℃)
Parameter
Symbol Min Typ Max Unit Condition
Peak Sensing Wavelength
λ_p
880
nm
Spectrum Sensitivity
λ
500~1,050
nm
*Parallel light of 1,000lux illumination is applied by a tungsten lamp of 2856K.
3. Guaranteed Probed Electrical Characteristics
Parameter
Symbol Min Typ Max Unit
C-E Voltage
BV_CEO
70
V
E-B Voltage
BV_EBO
6
V
E-C Voltage
BV_ECO
7
V
C-E Leakage Current I_CEO
50
nA
C-E Saturation Voltage V_CES
0.2
V
Rise/Fall Time
tr/tf
15/15(Typ)
us
DC Current Gain
h_FE
1300
2,000 -
(Ta=25℃)
Condition
I_C=100uA
I_E=100uA
I_E=10uA
V_CE=20V
I_C=2mA, I_B=100uA
V_CE=5V, I_C=1mA,
RL-1000Ω
V_CE=5V, Ic=2mA
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr