OPB0606 Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Silicon Photo Transistor

OPB0606
Silicon Photo Transistor
1. Structure
1.1 Chip Size : 0.61mm X 0.61mm
1.2 Chip thickness : 280±20um
1.3 Metallization : Top - Al, Bottom - Au
1.4 Passivation : Silicon Nitride
1.5 Bonding Pad Size
- Emitter : 155um X 155um
- Base : 90um X 90um
2. Guaranteed Probed Electrical Characteristics
Parameter
Symbol Min Typ Max Unit
C-E Leakage Current I_CEO
100 nA
Spectrum Sensitivity
λ
450
1100 nm
Peak Sensing Wavelength λp
880
nm
C-E Voltage
BV_CEO
30
V
C-B Voltage
BV_CBO
40
V
E-B Voltage
BV_EBO
5
V
E-C Voltage
BV_ECO
4
V
C-E Saturation Voltage V_CES
300 mV
Rise/Fall Time
tr/tf
15/15(Typ)
us
DC Current Gain
h_FE
1,000
2,200 -
(Ta=25℃)
Condition
V_CE=10V
I_CE=500uA
I_CB=50uA
I_EB=50uA
I_EC=50uA
I_C=5mA, I_B=1mA
V_CE=5V, I_C=1mA,
R_L-1000Ω
V_CE=10V, c=1mA
3. Hfe Bin Grade
Bin Grade
A
B
C
MIN
1,000
1,200
1,500
MAX
1,500
1,800
2,200
4. Maximum Ratings
Parameter
Symbol
Collector-Emitter Voltage V_CEO
Emitter-Collector Voltage V_ECO
(Ta=25℃)
Rating Unit
30
V
4
V
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr