OPB0505P Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Silicon Photo Transistor

OPB0505P
Silicon Photo Transistor
1. Structure
1.1 Chip Size : 0.50mm X 0.50mm
1.2 Chip thickness : 180±20um
1.3 Metallization : Top - Al, Bottom - Cr-Au
1.4 Passivation : Silicon Nitride
1.5 Bonding Pad Size
- Emitter : 120 X 120um
- Base : 60um X 60um
2. Electrical Characteristics
Parameter
Symbol Min
C-E Breakdown Voltage BV_CEO
30
C-B Breakdown Voltage BV_CBO
30
E-B Breakdown Voltage BV_EBO
5
E-C Breakdown Voltage BV_ECO
5
Collector Cut-Off Current I_CEO
C-E Saturation Voltage V_CES
DC Current Gain
h_FE
200
Typ Max Unit
(Ta=25℃)
Condition
V
I_CE=100uA
V
I_CE=10uA
V
I_CB=10uA
V
I_EC=10uA
100 nA
V_CE=20V
300 mV ^IC^{=2mA, I}B^=100uA
-
V_CE=5V, Ic=2mA
3. Maximum Ratings
Parameter
Symbol
Collector-Base Voltage V_CBO
(Ta=25℃)
Rating Unit
30
V
Collector-Emitter Voltage V_CEO
30
V
Emitter-Base Voltage V_EBO
5
V
Collector Current
Ic
100
mA
Junction Temperature
Storage Temperature
T_J
150
℃
T_stg -55 to+150 _℃
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
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