OPB0462 Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Silicon Photo Transistor

OPB0462
Silicon Photo Transistor
1. Structure
1.1 Chip Size : 0.46mm X 0.46mm
1.2 Chip thickness : 180±15um
1.3 Metallization : Top - Al, Bottom - Au
1.4 Passivation : Silicon Nitride
1.5 Bonding Pad Size
- Emitter : 135um
- Base : 70um X 70um
2. Guaranteed Probed Electrical Characteristics
Parameter
Symbol Min Typ Max Unit
C-E Leakage Current I_CEO
50
nA
Spectrum Sensitivity
λ
500
1,050 nm
Peak Sensing Wavelength λp
880
nm
C-E Voltage
BV_CEO
90
V
C-B Voltage
BV_CBO 100
V
E-B Voltage
BV_EBO
6.7
V
E-C Voltage
BV_ECO 7.1
V
C-E Saturation Voltage V_CES
DC Current Gain
h_FE
700
200 mV
1,400 -
(Ta=25℃)
Condition
V_ce=10V
I_CE=500uA
I_CB=50uA
I_EB=50uA
I_EC=50uA
I_C=5mA, I_B=1mA
V_CE=10V, Ic=1mA
3. Absolute Maximum Ratings
Parameter
Symbol
Collector-Emitter Voltage V_CEO
Emitter-Collector Voltage V_ECO
(Ta=25℃)
Rating Unit
90
V
7.1
V
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr